Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr <sub>0.2</sub> Ti <sub>0.8</sub> O <sub>3</sub> Films Assisted by Nanocavities
نویسندگان
چکیده
The mechanical switching of ferroelectric domains is achieved in PbZr0.2Ti0.8O3 thin films obtained by the sol-gel method for thicknesses up to 200 nm. dielectric polarization can be switched when a force higher than given threshold value order some μNewtons applied with tip an atomic microscope. This determined as function thickness films, and local hysteresis loops are recorded under stress. possibility such unusually thick related existence their volume physical nanoscale defects, which might play role pinning centers domains.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2022
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202200077